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Essay / An investigation into the chemical vapor deposition of...
Graphene exhibits many unique properties, which have led to large-scale research into this material. For example, its charge carriers have zero effective mass (called Dirac fermions) and exhibit ultra-relativistic effects, therefore possessing a mobility of up to 200,000 cm2V-1s-1; the material exhibits the half-integer quantum Hall effect and has an absorption of 2.3% of the visible spectrum of light. The highest quality and best structural integrity graphene is acquired by mechanical exfoliation of highly oriented graphite. As the graphene produced by this method is structurally superior, it is used as a benchmark and new methods are compared to it. However, although mechanically exfoliated graphene has small amounts of defects in its structure, its size, location, and scalability are extremely difficult to control. Therefore, a number of methods have been explored to create and reproduce high-quality graphene on a large scale. Among the possible methods, three have been explored in detail. One method explored used exfoliation of graphite in liquids. However, it is possible that this method introduces structural defects in the resulting thin film. Another possible method is the reduction of graphene oxide via HI and Woolins reagent. The most efficient method for producing graphene with high structural integrity is chemical vapor deposition (CVD) using transition metal surfaces. Common transition metals include Cu, Ni and Ru. The growth conditions and solubility of the carbon in the metal determine how deposition occurs, resulting in varying morphology and fineness of the produced graphene. The most promising metals for graphene growth were obtained using Ni11 or Cu10 as substrate. Graphene which was ...... middle of paper ...... g, Nature, 2009, 457, 706.PW Sutter, J. –I. Flege and EA Sutter, Nat. Mater., 2008, 7, 406J. Coraux, AT N'Diaye, C. Busse and T. Michely, Nano Lett., 2008, 8, 565A. N. Obrazstov, EA Obraztsova, AV Tyurnina and AA Zolothukin, Carbon, 2007, 45, 2017R. McLellan, Scr. Metall., 1969, 3, 389A. Earn money; TJ Harrington. Chemical. Tran. Élém., 1972, 2, 34M. Z. Butt, J. Mater. Sci. Lett. 1983, 2, 1A. New Zealand Trehan, Z. Anorg. Allg. Chem., 1962, 318, 107K. L. Chavez and DW J Hess, J. Electrochem. Soc., 2001, 148, G640X. Li, W. Cai, L. Colombo and RS Ruoff, Nano Lett., 2009, 9, 4268W. Regan, N. Alem, B. Aleman, B. Geng, C. Girit, L. Maserati, F. Wang, M. Crommie, and A. Zettl, Appl. Phys. Lett., 2010, 96, 11302Y. Lee, S. Bae, H. Jang, S. Jang, SE Zhu, SH Sim, YI Song, BH Hong, JH Ahn, Nano Lett. 2010, 10, 490.